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The present invention relates to a method of polishing substrates by chemical mechanical polishing (CMP) and apparatus therefor.
In recent years, semiconductor devices must be increasingly micropatterned as the density of the devices increases. Hence, as the devices become finer, scratches, pits and impurities on the surface of a wafer become a problem. To solve this problem, after a wafer has been polished by CMP, the CMP surface is polished by a method referred to as post-CMP polish. The post-CMP polish includes polishing using a polishing pad having a hardness higher than that of the CMP surface, and polishing using a polishing pad having a similar hardness as that of the CMP surface. The use of the former polishing pad has the problem of degradation of the pad or a complicated apparatus. The latter method is complicated and expensive.
It is an object of the present invention to provide a CMP method capable of smoothing a wafer surface of a desired degree and an apparatus therefor, in which a wafer can be polished with a polishing pad, which is inexpensive and capable of preventing contamination of a polishing pad and the wafer surface with substances such as silica particles, etc., which accumulate on the polishing pad during CMP, without adding any special additional steps for smoothing a wafer surface during post-CMP polish.
According to a method of polishing a substrate according to the present invention, the substrate is polished by chemical mechanical polishing (CMP) using a polishing pad having substantially the same hardness as that of a polishing surface of the substrate. The polishing pad is separated from the substrate after completion of CMP. The substrate is separated from the polishing pad by pushing down the polishing pad with a pushing means to move the substrate toward a holding means.
According to the CMP method of the present invention, the polishing pad is separated from the substrate after completion of CMP. Further, in the CMP method, the substrate is separated from the polishing pad by pushing down the polishing pad with the pushing means. Hence, when separating the substrate from the polishing pad, the pushing means and the substrate can be locked by the holding means. Hence, it is not necessary to add any additional step for separating the substrate from the polishing pad after completion of CMP. Accordingly, contamination of the polishing pad and the wafer surface with substances such as silica